收藏本站
New Product
Si7328DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, b
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
24
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
40
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
Diode Forward Voltage
R DS(on)
g fs
V SD
V GS = 10 V, I D = 18.9 A
V GS = 4.5 V, I D = 17.65 A
V DS = 15 V, I D = 18.9 A
I S = 3.2 A, V GS = 0 V
0.0055
0.0063
97
0.7
0.0066
0.0076
1.2
Ω
S
V
Dynamic b
Input Capacitance
C iss
2610
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C oss
C rss
Q g
Q gs
Q gd
V DS = 15 V, V GS = 0 V, f = 1 MHz
V DS = 15 V, V GS = 4.5 V, I D = 18.9 A
300
140
21
7.5
2.5
31.5
pF
nC
Gate Resistance
R g
f = 1 MHz
0.5
1.2
1.8
Ω
Turn-On Delay Time
t d(on)
10
15
Rise Time
t r
V DD = 15 V, R L = 0.86 Ω
10
15
Turn-Off Delay Time
Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t d(off)
t f
t rr
Q rr
I D ? 17.3 A, V GEN = 10 V, R g = 1 Ω
I F = 3.2 A, dI/dt = 100 A/μs
35
8
30
18
52.5
12
60
ns
nC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73960
S-81005-Rev. B, 05-May-08
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7342DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7370DP-T1-GE3 MOSFET N-CH 60V 9.6A PPAK 8SOIC
SI7374DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7382DP-T1-GE3 MOSFET N-CH 30V PPAK 8SOIC
SI7386DP-T1-GE3 MOSFET N-CH 30V 12A PPAK 8SOIC
SI7388DP-T1-GE3 MOSFET N-CH 30V PPAK 8SOIC
SI7390DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7403BDN-T1-GE3 MOSFET P-CH D-S 20V 1212-8 PPAK
相关代理商/技术参数
SI7328DN-T1-GE3 功能描述:MOSFET 30V 35A 52W 6.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI-7330 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Unipolar Driver ICs
SI7330A 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Unipolar Driver ICs
SI-7330A 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Unipolar Driver ICs
SI7336ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SI7336ADP
SI7336ADPT1E3 制造商:Vishay Intertechnologies 功能描述:
SI7336ADP-T1-E3 功能描述:MOSFET 30V 30A 5.4W 3.0mohm @10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7336ADP-T1-E3 制造商:Vishay Siliconix 功能描述:N CH MOSFET 30V 30A PowerPAK SO 制造商:Vishay Siliconix 功能描述:N CH, MOSFET, 30V, 30A, PowerPAK SO